Guard ring structure of semiconductor arrangement

ABSTRACT

Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

RELATED APPLICATIONS

This application is a divisional of and claims priority to U.S.Non-Provisional Application 14/330,285, titled “GUARD RING STRUCTURE OFSEMICONDUCTOR ARRANGEMENT” and filed on Jul. 14, 2014, which claimspriority to U.S. Provisional Application 61/846,297, titled “GUARD RINGSTRUCTURE OF SEMICONDUCTOR ARRANGEMENT” and filed on Jul. 15, 2013. U.S.Non-Provisional Application 14/330,285 and U.S. Provisional Application61/846,297 are incorporated herein by reference.

BACKGROUND

Guard rings are formed in semiconductor arrangements, such as integratedcircuits, to provide electrical isolation, structural integrity, etc.,for semiconductor devices of the semiconductor arrangements. A guardring comprises one or more semiconductor regions surrounding asemiconductor device. The device generally comprises a layer or regionof polysilicon (poly), such as in a gate structure of a transistordevice. A guard ring does not, however, comprise poly. The existence ofpoly in the device but not in the guard ring results in non-uniform polydensity between the guard ring and the device. The non-uniform densityof poly between the guard ring and the device impacts fabrication of thesemiconductor arrangement and, alternatively or in addition, affectsoperation of the semiconductor device.

DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flow diagram illustrating a method of forming a first guardring, according to some embodiments.

FIG. 2 is an illustration of a semiconductor arrangement comprising oneor more continuous guard rings, according to some embodiments.

FIG. 3 is an illustration of a semiconductor arrangement comprising oneor more poly layers, according to some embodiments.

FIG. 4 is an illustration of a semiconductor arrangement comprising oneor more discontinuous guard rings, according to some embodiments.

FIG. 5 is an illustration of a semiconductor arrangement comprising oneor more poly layers, according to some embodiments.

FIG. 6 is an illustration of a semiconductor arrangement comprising ametal layer, according to some embodiments.

FIG. 7 is an illustration of a semiconductor arrangement comprising ametal one layer, according to some embodiments.

FIG. 8A is an illustration of a cross sectional view of a semiconductorarrangement, according to some embodiments.

FIG. 8B is an illustration of a cross sectional view of a semiconductorarrangement, according to some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

One or more guard rings and techniques for forming guard rings areprovided in various embodiments of the present disclosure. A guard ringis formed around at least a portion of a device of a semiconductorarrangement, such as a fin field effect transistor (FinFET) device orother metal-oxide-semiconductor (MOS) device. According to someembodiments, one or more layers of polysilicon (poly) are formed overone or more guard rings to promote poly uniformity between the one ormore guard rings and the device.

A method 100 of forming a first guard ring is illustrated in FIG. 1. At102, a doped material layer is formed around at least a portion of adevice, such as a FinFET device, of a semiconductor arrangement as afirst guard ring. In some embodiments, the doped material layercomprises a doped material, such as doped silicon, an active regionmaterial, a diffusion material, an oxide diffusion material, a materialutilized for a source or drain region, etc. In some embodiments, thefirst guard ring provides body-strength, electrical isolation, noisemitigation, etc. for the device. For example, the composition of thefirst guard ring provides structural integrity that resists forces, suchas torque, twisting, vibrations, etc. applied to the semiconductorarrangement and the device. In some embodiments, the composition of thefirst guard ring has a desired electrical conductivity ornon-conductivity to provide a desired electrical isolation for thedevice. In some embodiments, the first guard ring comprises a singlecontinuous guard ring portion surrounding the device, as illustrated inFIG. 2. For example, FIG. 2 illustrates a first guard ring 204 that isformed around a device 202 of a semiconductor arrangement 200, accordingto some embodiments. In some embodiments, the first guard ring 204 neednot have a square shape around the device 202, but has any other desiredshape, such as circular, oval, rectangular, trapezoidal, triangular,octagonal, irregular shape, asymmetric shape, etc. In embodiments, theguard ring comprises one or more discontinuous guard ring portions, suchas a first guard ring portion and a second guard ring portion, asillustrated in FIG. 4. For example, FIG. 4 illustrates a first guardring 404, comprising a first guard ring portion 404 a, a second guardring portion 404 b, a third guard ring portion 404 c, and a fourth guardring portion 404 d, that is formed around at least a portion of a device402 of semiconductor arrangement 400, according to some embodiments. Insome embodiments, the first guard ring 404 has at least one of adifferent arrangement of guard ring portions than illustrated in FIG. 4,a different number of guard ring portions than illustrated in FIG. 4,different shaped guard ring portions than illustrated in FIG. 4, etc. Insome embodiments, at least one guard ring portion has a different shapethan another guard ring portion, such as a first guard ring portionhaving a rectangular shape and a second guard ring portion having anoval shape, etc.

At 104, a first poly layer is formed over the first guard ring, asillustrated in FIGS. 3 and 5. For example, FIG. 3 illustrates a firstpoly layer 302 formed over the first guard ring 204, according to someembodiments. In some embodiments, the first poly layer 302 is patternedafter being formed, as illustrated in FIG. 3. FIG. 5, for example,illustrates a first poly layer 502 formed over the first guard ring 404,according to some embodiments. In some embodiments, the first poly layer502 is patterned after being formed, as illustrated in FIG. 5. Accordingto some embodiments, the first poly layer 302 and/or 502 is patternedinto one or more poly layer portions, where different poly layerportions have similar or differing sizes, shapes, dimensions, etc. It isappreciated that the first poly layer 302 and/or 502 comprises anynumber of poly layer portions. In FIG. 5, for example, 8 poly layerportions are formed over the first guard ring portion 404 a, 2 polylayer portions are formed over the second guard ring portion 404 b, 8poly layer portions are formed over the third guard ring portion 404 c,and 2 poly layer portions are formed over the fourth guard ring portion404 d. In some embodiments, at least one poly layer portion straddlesmore than one guard ring and/or more than one guard ring portion. Forexample, a poly layer portion extends between and/or is disposed uponthe first guard ring portion 404 a and the second guard ring portion 404b, according to some embodiments.

In some embodiments, given that the semiconductor device 202 and/or 402generally comprises a poly region or poly layer, such as a gate of atransistor device, the first poly layer 302 and/or 502 promotes a moreuniform poly density across the semiconductor arrangement 200 and/or400. For example, in the absence of the first poly layer 302 and/or 502,the first guard ring 204 and/or 404 has a poly density of zero orsubstantially zero. With the addition of the first poly layer 302 and/or502, however, the first guard ring 204 and/or 404 has at least somepoly, which increases the poly density of the first guard ring 204and/or 404. The existence of poly in both the semiconductor device 202and/or 402 and the corresponding first guard ring 204 and/or 404improves semiconductor processing by inhibiting issues that arise withabrupt changes in materials or structures, such as where the device 202and/or 402 has a material such as poly, but an adjacent structure suchas the first guard ring 204 and/or 404 does not have that material.Without the increased poly density and/or more uniform poly distributionacross the semiconductor arrangement 200 and/or 400, the likelihood ofprocessing defects increases. For example, defects such as at least oneof film-stress, non-uniform polishing, or reduced poly gate lengthcontrol are more likely to occur, such as during chemical mechanicalpolishing. Such defects are likely to adversely affect electricalperformance or characteristics or one or more devices of thesemiconductor arrangement 200 and/or 400, such as at least one ofvoltage threshold, saturation current, or circuit mismatch. In someembodiments, the existence of the poly on one or more guard ringssatisfies poly uniformity or density criteria regardless of thecomposition or amount of poly in the device 202 and/or 402, such aswhere the one or more guard rings, and poly thereon, are distributedaround the semiconductor arrangement 200 and/or 400.

In some embodiments, a second guard ring is formed around at least aportion of the device and around at least a portion of the first guardring, as illustrated in FIGS. 2 and 4. For example, FIG. 2 illustrates asecond guard ring 206 formed around the device 202 and around the firstguard ring 204, where the second guard ring 206 comprises a singlecontinuous guard ring portion, according to some embodiments. FIG. 4,for example, illustrates a second guard ring 406, comprising a firstguard ring portion 406 a, a second guard ring portion 406 b, a thirdguard ring portion 406 c, a fourth guard ring portion 406 d, a fifthguard ring portion 406 e, and a sixth guard ring portion 406 f, that isformed around at least a portion of the device 402 and around at least aportion of the first guard ring 404, according to some embodiments. Aswith the first guard ring 204 and/or 404, the second guard ring 206and/or 406 has any size, shape, arrangement, number of portions, shapeof portions, etc., and, in some embodiments provides body-strength,electrical isolation, noise mitigation, etc. for the semiconductordevice 202 and/or 402.

A second poly layer is formed over the second guard ring, as illustratedin FIGS. 3 and 5, according to some embodiments. For example, FIG. 3illustrates a second poly layer 304 formed over the second guard ring206, according to some embodiments. FIG. 5, for example, illustrates asecond poly layer 504 formed over the second guard ring 406, accordingto some embodiments. As with the first poly layer 302 and/or 502, thesecond poly layer 304 and/or 504 is patterned into one or more polylayer portions, according to some embodiments, where different polylayer portions have similar or differing sizes, shapes, dimensions, etc.It is appreciated that the second poly layer 304 and/or 504 comprisesany number of poly layer portions. In FIG. 5, for example, 12 poly layerportions are formed over the first guard ring portion 406 a, 2 polylayer portions are formed over the second guard ring portion 406 b, 2poly layer portions are formed over the third guard ring portion 406 c,12 poly layer portions are formed over the fourth guard ring portion 406d, 2 poly layer portions are formed over the fifth guard ring portion406 e, and 2 poly layer portions are formed over the sixth guard ringportion 406 f. As with the first poly layer 302 and/or 502, at least onepoly layer portion is associated with more than one guard ring and/ormore than one guard ring portion, such as the first guard ring portion406 a and the second guard ring portion 406 b, according to someembodiments. As with the first poly layer 302 and/or 502, the secondpoly layer 304 and/or 504 promotes poly density uniformity across thesemiconductor arrangement 200 and/or 400, such as by increasing orestablishing an amount of poly in or on the second guard ring 206 and/or406.

In some embodiments, the first guard ring 204 and/or 404 and the secondguard ring 206 and/or 406 are formed from a same layer of material. Insome embodiments, the layer of material is patterned to form at leastone of the first guard ring 204 and/or 404 or the second guard ring 206and/or 406 illustrated in at least one of FIG. 3 or FIG. 5. In someembodiments, the first poly layer 302 and/or 502 and the second polylayer 304 and/or 504 are formed from a same layer of poly. In someembodiments, the first guard ring 204 and/or 404 and the second guardring 206 and/or 406 are formed, and a layer of polysilicon is formedover the first guard ring 204 and/or 404 and the second guard ring 206and/or 406 to form the first poly layer 302 and/or 502 and the secondpoly layer 304 and/or 504. In some embodiments, the layer of polysiliconis patterned to form at least one of the first poly layer 302 and/or 502or the second poly layer 304 and/or 504 as illustrated in at least oneof FIG. 3 or FIG. 5. In some embodiments, a poly region or poly layer ofthe device 202 and/or 402 is formed, such as patterned, from a samelayer used to form at least one of the first poly layer 302 and/or 502or the second poly layer 304 and/or 504 such that characteristics, suchas density, thickness, composition, etc., of the poly in the device issubstantially similar to corresponding characteristics in at least oneof the first poly layer 302 and/or 502 or the second poly layer 304and/or 504.

In some embodiments, the first guard ring comprises a first dopedmaterial having a first doping type such as N-type or P-type. In someembodiments, the second guard ring comprises a second doped materialhaving a second doping type such as N-type or P-type. In someembodiments, the first doping type is different than the second dopingtype. In some embodiments, at least one of the first guard ring 204and/or 404 or the second guard ring 206 and/or 406 is connected to apower supply voltage VDD or to ground. According to some embodiments, aconnectivity structure, such as one or more of a via, a metal layer, ametal one layer, or a metal structure, is used to connect a guard ringto the power supply voltage VDD or to ground. According to anembodiment, a connectivity structure, such as one or more of a via, ametal layer, a metal one layer, or a metal structure, is used to connecta first guard ring portion to a second guard ring portion.

In some embodiments, a metal layer 600 is formed within thesemiconductor arrangement 400, as illustrated in FIG. 6. In someembodiments, the metal layer 600 is patterned so as to be formedaccording to a horizontal structure relative to a surface of a substrateupon which the semiconductor arrangement 400 is formed, such as ahorizontal direction that is different from a vertical directionaccording to which poly layer portions of the first poly layer 502 orpoly layer portions of the second poly layer 504 are formed. In someembodiments, the metal layer 600 is formed to connect a first guard ringportion of a guard ring to a second guard ring portion of the guardring. In some embodiments, the metal layer 600 is formed to connect aguard ring to a power supply voltage VDD or to ground, such as through avia connected to the metal layer 600. In some embodiments, the metallayer 600 comprises a conductive material, such as a metal, a dopedmaterial, a material formed by poly process, a first metal layer, orother suitable material. The metal layer 600 serves as a metal routinglayer according to some embodiments. In some embodiments, the metallayer 600 is connected to or is separate from at least one of the firstguard ring 404 or the second guard ring 406. In some embodiments, themetal layer 600, and not a metal one layer, is used to bias a guardring, which frees up routing resources and space that would otherwise beused by the metal one layer for biasing.

In some embodiments, a metal one layer 700 is formed within thesemiconductor arrangement 400, as illustrated in FIG. 7. In someembodiments, the metal one layer 700 comprises one or more layers ofconductive material. In some embodiments, the metal one layer 700 ispatterned so as to be formed according to a vertical structure relativeto the surface of the substrate upon which the semiconductor arrangement400 is formed, such as a vertical direction similar to the verticaldirection according to which poly layer portions of the first poly layer502 or poly layer portions of the second poly layer 504 are formed. Insome embodiments, the metal one layer 700 is formed to connect a firstguard ring portion of a guard ring to a second guard ring portion of theguard ring, such as connecting the first guard ring portion 404 a, thesecond guard ring portion 404 b, and the third guard ring portion 404 cof the first guard ring 404. In some embodiments, the metal one layer700 is formed to connect a guard ring to a power supply voltage VDD orto ground, such as through a via connected to the metal one layer 700.In some embodiments, the metal one layer 700 comprises a conductivematerial, such as a metal, a doped material, a material formed by polyprocess, or other suitable material. The metal one layer 700 serves as ametal routing layer according to some embodiments. In some embodiments,the metal one layer 700 is connected to or is separate from at least oneof the first guard ring 404 or the second guard ring 406. In someembodiments, the metal layer 600 is formed over the metal one layer 700,and the metal layer 600 connects to metal one portions of the metal onelayer 700 so that such metal one portions have a similar voltagepotential. In some embodiments, the first guard ring 404 is illustrativeof a metal-oxide-semiconductor (MOS) device layout because the firstguard ring 404 is formed with the doped material layer, the first polylayer 502, the metal layer 600, and the metal one layer 700.

FIG. 8A illustrates a cross sectional view 800 taken along a line 650 ofFIG. 6. The cross sectional view 800 illustrates the first guard ring404 with the first poly layer 502 over the first guard ring 404, and themetal layer 600 over the first poly layer 502. According to someembodiments, a via 810 is formed over the metal layer 600, and is usedto connect the metal layer 600 to another metal layer 812, such as ametal one layer. In some embodiments, the metal layer 600 and the via810 are regarded as a connectivity structure that connects the firstpoly layer 502 and the first guard ring 404 to the metal layer 812.

FIG. 8B illustrates a cross sectional view 850 taken along a line 750 ofFIG. 7. The cross sectional view 850 illustrates the first guard ring404 with the metal one layer 700 over the first guard ring 404.According to some embodiments, a via 818 is formed over the metal onelayer 700, and is used to connect the metal one layer 700 to a metallayer 820. In some embodiments, the via 818 is regarded as aconnectivity structure that connects the metal one layer 700 and thefirst guard ring 404 to the metal layer 820.

In some embodiments, a semiconductor arrangement as described herein isformed as part of a complementary metal oxide semiconductor (CMOS)fabrication process. In some embodiments, as the semiconductor device isformed, the guard rings, and poly formed thereover, are formed as well.For example, where the device comprises a transistor, the poly is formedover the guard rings when a poly gate of the transistor is formed. Forexample, a single layer of polysilicon is formed and then patterned toform the poly gate of the transistor as well as the poly over the guardrings.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand various aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes and/or achieving the same advantages of variousembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure. Although thesubject matter has been described in language specific to structuralfeatures or methodological acts, it is to be understood that the subjectmatter of the appended claims is not necessarily limited to the specificfeatures or acts described above. Rather, the specific features and actsdescribed above are disclosed as embodiment forms of implementing atleast some of the claims.

Various operations of embodiments are provided herein. The order inwhich some or all of the operations are described should not beconstrued to imply that these operations are necessarily orderdependent. Alternative ordering will be appreciated given the benefit ofthis description. Further, it will be understood that not all operationsare necessarily present in each embodiment provided herein. Also, itwill be understood that not all operations are necessary in someembodiments.

It will be appreciated that layers, features, elements, etc. depictedherein are illustrated with particular dimensions relative to oneanother, such as structural dimensions or orientations, for example, forpurposes of simplicity and ease of understanding and that actualdimensions of the same differ substantially from that illustratedherein, in some embodiments. Additionally, a variety of techniques existfor forming the layers, features, elements, etc., mentioned herein, suchas etching techniques, implanting techniques, doping techniques, spin-ontechniques, sputtering techniques such as magnetron or ion beamsputtering, growth techniques, such as thermal growth or depositiontechniques such as chemical vapor deposition (CVD), physical vapordeposition (PVD), plasma enhanced chemical vapor deposition (PECVD), oratomic layer deposition (ALD), for example.

Further, unless specified otherwise, “first,” “second,” or the like arenot intended to imply a temporal aspect, a spatial aspect, an ordering,etc. Rather, such terms are merely used as identifiers, names, etc. forfeatures, elements, items, etc. For example, a first channel and asecond channel generally correspond to channel A and channel B or twodifferent or two identical channels or the same channel.

Moreover, “exemplary” is used herein to mean serving as an example,instance, illustration, etc., and not necessarily as advantageous. Asused in this application, “or” is intended to mean an inclusive “or”rather than an exclusive “or”. In addition, “a” and “an” as used in thisapplication are generally to be construed to mean “one or more” unlessspecified otherwise or clear from context to be directed to a singularform. Also, at least one of A and B or the like generally means A or Bor both A and B. Furthermore, to the extent that “includes”, “having”,“has”, “with”, or variants thereof are used, such terms are intended tobe inclusive in a manner similar to “comprising”.

Also, although the disclosure has been shown and described with respectto one or more implementations, equivalent alterations and modificationswill occur to others of ordinary skill in the art based upon a readingand understanding of this specification and the annexed drawings. Thedisclosure includes all such modifications and alterations and islimited only by the scope of the following claims. In particular regardto the various functions performed by the above described components(e.g., elements, resources, etc.), the terms used to describe suchcomponents are intended to correspond, unless otherwise indicated, toany component which performs the specified function of the describedcomponent (e.g., that is functionally equivalent), even though notstructurally equivalent to the disclosed structure. In addition, while aparticular feature of the disclosure may have been disclosed withrespect to only one of several implementations, such feature may becombined with one or more other features of the other implementations asmay be desired and advantageous for any given or particular application.

According to an aspect of the instant disclosure, a semiconductorarrangement is provided. The semiconductor arrangement comprises a firstguard ring surrounding at least a portion of a device, according to someembodiments. A first poly layer is formed over the first guard ring,according to some embodiments.

According to an aspect of the instant disclosure, a method for forming afirst guard ring is provided. The method comprises forming a dopedmaterial layer around at least a portion of a device of a semiconductorarrangement as a first guard ring, according to some embodiments. Afirst poly layer is formed over the first guard ring, according to someembodiments.

According to an aspect of the instant disclosure, a semiconductorarrangement is provided. The semiconductor arrangement comprises a firstdoped material guard ring surrounding at least a portion of a device,according to some embodiments. A first poly layer is formed over thefirst doped material guard ring, according to some embodiments. A metallayer is formed over the first poly layer, according to someembodiments. A second metal layer is connected to the metal layer by avia, according to some embodiments.

What is claimed is:
 1. A method for forming a guard ring structure,comprising: forming a first doped material layer around at least aportion of a device of a semiconductor arrangement, wherein the firstdoped material layer defines a first guard ring; forming a first polylayer over the first guard ring, wherein the first poly layer comprisesa first poly layer portion in contact with the first guard ring and asecond poly layer portion in contact with the first guard ring andspaced apart from and discontinuous from the first poly layer portion;and forming a metal layer over the first poly layer, wherein the metallayer comprises a metal layer portion coupling the first poly layerportion to the second poly layer portion.
 2. The method of claim 1,wherein the first doped material layer forms a closed loop around thedevice.
 3. The method of claim 1, wherein the first doped material layercomprises a plurality of discontinuous segments.
 4. The method of claim3, wherein the first poly layer portion is in contact with a firstsegment of the plurality of discontinuous segments and a second segmentof the plurality of discontinuous segments.
 5. The method of claim 1,comprising forming a second doped material layer around at least aportion of the first doped material layer, the second doped materiallayer defining a second guard ring.
 6. The method of claim 5, whereinthe first poly layer portion is in contact with the first guard ring andthe second guard ring.
 7. The method of claim 5, wherein the first dopedmaterial layer comprises a first dopant type and the second dopedmaterial layer comprises a second dopant type different than the firstdopant type.
 8. The method of claim 1, wherein a longest dimension ofthe first poly layer portion is parallel to a longest dimension of thesecond poly layer portion.
 9. The method of claim 1, wherein a longestdimension of the first poly layer portion extends in a first directionand a longest dimension of the metal layer portion extends in a seconddirection different than the first direction.
 10. The method of claim 9,wherein the first direction is perpendicular to the second direction.11. The method of claim 1, wherein: the first doped material layercomprises a plurality of discontinuous segments, and the methodcomprises forming a metal one layer to couple a first segment of theplurality of discontinuous segments to a second segment of the pluralityof discontinuous segments.
 12. The method of claim 11, wherein a longestdimension of the first poly layer portion is parallel to a longestdimension of the metal one layer.
 13. The method of claim 1, comprising:forming a metal one layer, wherein the metal one layer comprises a firstmetal one layer portion and a second metal one layer portion spacedapart from and discontinuous from the first metal one layer portion. 14.The method of claim 13, wherein the metal layer couples the first metalone layer portion to the second metal one layer portion.
 15. A methodfor forming a guard ring structure, comprising: forming a first dopedmaterial layer around at least a portion of a device of a semiconductorarrangement, wherein the first doped material layer defines a firstguard ring; forming a first poly layer over the first guard ring;forming a metal layer over the first poly layer; and forming a metal onelayer over the metal layer, wherein: the metal one layer comprises afirst metal one layer portion overlying the first guard ring and asecond metal one layer portion overlying the first guard ring, the firstmetal one layer portion is spaced apart from and discontinuous from thesecond metal one layer portion, and the metal layer couples the firstmetal one layer portion to the second metal one layer portion.
 16. Themethod of claim 15, wherein: the first doped material layer comprises aplurality of discontinuous segments, and the first metal one layerportion overlies a first segment of the plurality of discontinuoussegments and a second segment of the plurality of discontinuoussegments.
 17. The method of claim 15, wherein: the first poly layercomprises a first poly layer portion in contact with the first guardring and a second poly layer portion in contact with the first guardring and spaced apart from and discontinuous from the first poly layerportion.
 18. The method of claim 17, wherein the metal layer couples thefirst poly layer portion to the second poly layer portion.
 19. A methodfor forming a guard ring structure, comprising: forming a first dopedmaterial layer around at least a portion of a device of a semiconductorarrangement, wherein: the first doped material layer comprises aplurality of discontinuous segments, and the plurality of discontinuoussegments define a first guard ring; forming a first poly layer over thefirst guard ring, wherein the first poly layer comprises a first polylayer portion overlying the first guard ring and extending in a firstdirection; and forming a metal layer over the first poly layer, whereinthe metal layer comprising a first metal layer portion extending in asecond direction different than the first direction.
 20. The method ofclaim 19, wherein the first poly layer portion is in contact with afirst segment of the plurality of discontinuous segments and a secondsegment of the plurality of discontinuous segments.